Nekukurumidza kuvandudzwa kweoptoelectronic tekinoroji, semiconductor lasers yakawana mashandisirwo akapararira mundima dzakadai sekutaurirana, zvekurapa, laser inotangira, kugadzirwa kwemaindasitiri, uye zvemagetsi zvevatengi. Papakati peiyi tekinoroji pane PN junction, iyo inoita basa rakakosha-kwete chete senzvimbo yekuburitsa chiedza asiwo sehwaro hwekushanda kwechishandiso. Ichi chinyorwa chinopa yakajeka uye pfupi pfupiso yechimiro, misimboti, uye akakosha mabasa ePN junction mune semiconductor lasers.
1. Chii chinonzi PN Junction?
A PN junction ndiyo interface inoumbwa pakati peP-type semiconductor uye N-mhando semiconductor:
P-type semiconductor inoiswa tsvina yekugamuchira, senge boron (B), ichiita maburi ayo anochaja vatakuri.
Iyo N-mhando semiconductor inoiswa nevanopa tsvina, senge phosphorous (P), zvichiita kuti maerekitironi ave mazhinji anotakura.
Kana P-mhando uye N-mhando zvinhu akaunzwa kusangana, maerekitironi kubva N-region anopararira kupinda P-region, uye makomba kubva P-region anopararira kupinda N-nharaunda. Kupararira uku kunogadzira dunhu rekuderera uko maerekitironi nemaburi zvinosangana, zvichisiya maion anochajiswa anogadzira munda wemagetsi wemukati, unozivikanwa sechivharo chinogoneka chakavakirwa.
2. Basa rePN Junction muLasers
(1) Carrier Jekiseni
Kana iyo laser ichishanda, iyo PN junction iri mberi yakarerekera: iyo P-dunhu yakabatana kune yakanaka voltage, uye iyo N-nharaunda kune yakaipa voltage. Izvi zvinodzima magetsi emukati, zvichibvumira maerekitironi nemaburi kuti abaswe munzvimbo inoshanda panosangana, paangangosangana zvakare.
(2) Kubuda Kwechiedza: Mavambo eStimulated Emission
Munharaunda inoshanda, maerekitironi akaiswa jekiseni nemaburi anobatanidza uye anoburitsa mafotoni. Pakutanga, maitiro aya anongoerekana abuda, asi sezvo kuwanda kwephoton kunowedzera, mafotoni anogona kukurudzira kumwe kusanganiswa kweelectron-gomba, kuburitsa mamwe mafotoni ane chikamu chimwe chete, kutungamira, uye simba-izvi zvinokurudzirwa kubuda.
Iyi nzira inoumba hwaro hwelaser (Chiedza Amplification neStimulated Emission of Radiation).
(3) Gain uye Resonant Cavities Form Laser Output
Kukwidziridza kuburitswa kwemhepo, semiconductor lasers inosanganisira resonant cavities pamativi ese ePN junction. Mune edge-emitting lasers, semuenzaniso, izvi zvinogona kuwanikwa uchishandisa Distributed Bragg Reflectors (DBRs) kana girazi coatings kuratidza mwenje kumashure nekudzoka. Iyi setup inobvumira chaiyo wavelengths yechiedza kuti ikwidziridzwe, zvichizoguma nekunyatsoenderana uye inotungamira laser kubuda.
3. PN Junction Structures uye Dhizaini Yekugadzirisa
Zvichienderana nerudzi rwe semiconductor laser, iyo PN chimiro chinogona kusiyana:
Imwe Heterojunction (SH):
Iyo P-dunhu, N-dunhu, uye nharaunda inoshanda inogadzirwa nechinhu chimwe chete. Nzvimbo yekubatanidza yakafara uye haina kunyatsoshanda.
Kaviri Heterojunction (DH):
A nhete bhendi rinoshanda layer rakaiswa pakati peP- neN-matunhu. Izvi zvinosungirira zvese zvinotakura uye mafotoni, zvakanyanya kuvandudza kugona.
Quantum Zvakanaka Chimiro:
Inoshandisa iyo yekupedzisira-yakatetepa inoshanda layer kugadzira quantum kuvharirwa mhedzisiro, inovandudza chikumbaridzo maitiro uye modulation kumhanya.
Izvi zvimiro zvakagadzirirwa kusimudzira kushanda kwejekiseni rekutakura, kusanganisa, uye kubuda kwechiedza munharaunda yePN junction.
4. Mhedziso
Iyo PN junction ndeyechokwadi "moyo" we semiconductor laser. Kugona kwayo kupinza vatakuri pasi pekurerekera kumberi ndiko kukonzeresa kwechizvarwa chelaser. Kubva pakuumbwa kwemaitiro uye kusarudzwa kwezvinhu kuenda kukudzora kwephoton, kuita kwese kwelaser mudziyo kunotenderera nekugadzirisa iyo PN junction.
Sezvo optoelectronic technologies ichiramba ichifambira mberi, kunzwisisa kwakadzama kwePN junction physics haisi kungowedzera kushanda kwelaser asiwo inoisa hwaro hwakasimba hwekuvandudzwa kwechizvarwa chinotevera chepamusoro-simba, high-speed, uye yakaderera-mutengo semiconductor lasers.
Nguva yekutumira: May-28-2025